t o ? 92m 1. collect or 2. base 3. emitter t o ? 92mod 1. emitter 2. col lect or 3. base jiangsu changjiang ele c tron ics technology co., ltd t o -92mod plastic-encapsulate transistors 2SC2229 transist or (npn) fea tures z high breakdown voltage z high transition frequency j c ( t www.cj-elec.com 1 www.cj-elec.com maximum ratings ( t a =25 unless otherwise noted ) symbol para mete r v a lue unit v cbo coll ector-bas e voltage 200 v v ce o coll ector-emitter v oltage 150 v v eb o emitter-base v o ltage 5 v i c coll ector curr ent -continuous 50 ma p c coll ector po wer dissipation mw t j junctio n t emperature 150 t st g s t orage temperature -55 to +150 equivalent circuit c2 ,!- . ///, . ordering inform a tion part number package packing method pack quantity t o -92mod bulk t o -92mod t ape 2SC2229 2SC2229-ta thermal resistance from junction to ambient 156 / w r ja 800 d,aug,2017 c2229 500pcs/bag 2000pcs/box solid dot = green mo ldi ng compou nd device, if none, the normal device
www.cj-elec.com 2 www.cj-elec.com d,aug,2017 a t =25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100a,i e =0 200 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 150 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v collector cut-off current i cbo v cb =200v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =5v, i c =10ma 70 240 h fe(2) v ce =5v, i c =1ma 50 dc current gain h fe(3) v ce =5v, i c =50ma 50 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.5 v base-emitter saturation voltage v be (sat) i c =10ma,i b =1ma 1 v transition frequency f t v ce =30v,i c =10ma 80 mhz classification of h fe(1) rank o y range 70-140 120-240
0.1 1 10 10 100 0.1 1 10 100 0.00 0.06 0.12 0.18 0.24 0.30 0.1 1 10 1 0 25 50 75 100 125 150 0 200 400 600 800 1000 0.2 0.4 0.6 0.8 1.0 0.1 1 10 0.1 1 10 0.2 0.4 0.6 0.8 1.0 0246810 0 5 10 15 20 400 30 50 h fe ?? common emitter v ce =5v 3 30 0.3 t a =100 t a =25 dc current gain h fe collector current i c (ma) i c 3 30 0.3 collector-emitter saturation voltage v cesat (v) collector current i c (ma) =10 t a =25 t a =100 i c v cesat ?? 30 3 100 10 3 0.3 20 c ob c ib reverse voltage v (v) f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? capacitance c (pf) collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a 50 v be i c ?? 30 3 0.3 t a =25 t a =100 common emitter v ce =5v collector current i c (ma) base-emmiter voltage v be (v) 3 30 0.3 =10 base-emitter saturation voltage v besat (v) collector current i c (ma) t a =25 t a =100 50 i c v besat ?? static characteristic collector current i c (ma) collector-emitter voltage v ce (v) 100ua 90ua 80ua 70ua 60ua 50ua 40ua 30ua 20ua i b =10ua common emitter t a =25 t y pical characteristics www.cj-elec.com 3 www.cj-elec.com d,aug,2017 a,dec,2010
symbol dimensions in millimeters dimensions in inches min. max. min. max. a 4.800 5.000 0.189 0.197 a1 1.730 2.030 0.068 0.080 b 0.440 0.600 0.017 0.024 b1 0.940 1.100 0.037 0.043 c 0.350 0.450 0.014 0.018 d 5.900 6.100 0.232 0.240 d1 4.000 0.157 e 8.500 8.700 0.335 0.343 e 1.500 typ. 0.059 typ. e1 2.900 3.100 0.114 0.122 l 13.800 14.200 0.543 0.559 - 1.600 0.063 0.000 0.380 0.000 0.015 h www.cj-elec.com 4 www.cj-elec.com ' $ x j
www.cj-elec.com 5 www.cj-elec.com ' $ x j
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